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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IR2301PBF is a high voltage high speed power MOSFET and IGBT high and low Side Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage (dV/dt immune)
Under-voltage lockout for both channels
Logic and power ground ±5V offset
Lower di/dt gate driver for better noise immunity
Outputs in phase with inputs

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IR2301PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	8 Pin
Case/Package	DIP-8
Supply Voltage (DC)	5.00V (min)
Rise/Fall Time	130ns, 50ns
Number of Outputs	2 Output
Output Voltage	620 V
Output Current	200 mA
Number of Positions	8 Position
Power Dissipation	1000 mW
Fall Time (Max)	80 ns
Fall Time (Max)	220 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	1000 mW
Supply Voltage	5V ~ 20V
Supply Voltage (Max)	20 V
Supply Voltage (Min)	5 V
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Size-Length	10.92 mm
Size-Width	7.11 mm
Size-Height	5.33 mm
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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