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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The IRF9520NPBF is a -100V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
Advanced process technology
Dynamic dV/dt rating
Fast switching
Fully avalanche rated
175°C Operating temperature

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IRF9520NPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	48 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.48 Ω
Polarity	P-CH
Power Dissipation	48 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	100 V
Continuous Drain Current (Ids)	6.8A
Rise Time	47 ns
Input Capacitance (Ciss)	350pF @25V(Vds)
Fall Time	31 ns
Operating Temperature (Max)	175 ℃
	Show
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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