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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The IRLL2705PBF is a 55V single N-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The power MOSFET is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place, it has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Surface mount
Dynamic dV/dt rating
Logic level gate drive
Fast switching
Easy to parallel
Advanced process technology
Ultra low on-resistance

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IRLL2705PBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Power Rating	2.1 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.04 Ω
Polarity	N-Channel
Power Dissipation	2.1 W
Threshold Voltage	2 V
Input Capacitance	870pF @25V
Drain to Source Voltage (Vds)	55 V
Breakdown Voltage (Drain to Source)	55 V
Continuous Drain Current (Ids)	5.2A
Rise Time	12 ns
Input Capacitance (Ciss)	870pF @25V(Vds)
Fall Time	22 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1W (Ta)
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Size-Length	6.7 mm
Size-Width	3.7 mm
Size-Height	1.7 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not For New Designs
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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