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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The IRLMS6702TRPBF is a HEXFET® single P-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. It"s unique thermal design and RDS (ON) reduction enables a current-handling increase of nearly 300%.
Generation V technology
Ultra-low static drain-to-source ON-resistance
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

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IRLMS6702TRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-23-6
Power Rating	1.7 W
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.2 Ω
Polarity	P-Channel
Power Dissipation	1.7 W
Input Capacitance	210 pF
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	2.4A
Rise Time	20 ns
Input Capacitance (Ciss)	210pF @15V(Vds)
Input Power (Max)	1.7 W
Fall Time	18 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.7W (Ta)
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Size-Length	3 mm
Size-Width	1.75 mm
Size-Height	1.3 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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