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IXDR30N120 - IXYS Semiconductor
Manufacturer:
IXYS Semiconductor
ManyChip's Part#:
MC92515533
Category:
IGBT Transistor, IGBT Module
Package:
TO-247
Datasheet:
Datasheet 3D Model
Description:
IXYS SEMICONDUCTOR IXDR30N120 IGBT Single Transistor, Isolated, 50A, 2.4V, 200W, 1.2kV, TO-247AD, 3Pins
Stock Locations:
Availability:
19 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 9.67

Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

This powerful and secure IXDR30N120 IGBT transistor from Ixys Corporation will make sure your circuit works properly. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 200000 mW. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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IXDR30N120 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	200 W
Rise Time	70.0 ns
Breakdown Voltage (Collector to Emitter)	1200 V
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
	Show
Size-Length	16.13 mm
Size-Width	5.21 mm
Size-Height	21.34 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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