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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IXFN140N30P is a Polar™ N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features reduced static drain-to-source ON-resistance and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers and high speed power switching applications.
Avalanche rating
Low Qg
Low package inductance
Easy to mount
Space saving

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IXFN140N30P Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Panel
Number of Pins	4 Pin
Case/Package	SOT-227-4
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.024 Ω
Polarity	N-Channel
Power Dissipation	700 W
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	300 V
Continuous Drain Current (Ids)	140 A
Rise Time	30 ns
Reverse recovery time	200 ns
Input Capacitance (Ciss)	14800pF @25V(Vds)
Fall Time	20 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	700W (Tc)
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Size-Length	38.2 mm
Size-Width	25.07 mm
Size-Height	9.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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