IXYS SEMICONDUCTOR IXYB82N120C3H1 IGBT Single Transistor, 164A, 2.75V, 1.04kW, 1.2kV, TO-264AA, 3Pins New
| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-264-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 1.04 kW |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 420 ns |
| Input Power (Max) | 1040 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.04 kW |
| Show | |
| Size-Length | 20.29 mm |
| Size-Width | 5.31 mm |
| Size-Height | 26.59 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance Edition | 2016/06/20 |