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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

GENERAL DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive silicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. Matching characteristics include offset voltage of 40 µV, temperature drift of 0.15 µV/°C, and hFE matching of 0.7%. High hFE is provided over a six decade range of collector current, including an exceptional hFE of 590 at a collector current of only 10 nA. The high gain at low collector current makes the MAT01 ideal for use in low power, low level input stages.
FEATURES
Low VOS (VBE match): 40 µV typical, 100 µV maximum
Low TCVOS: 0.5 µV/°C maximum
High hFE: 500 minimum
Excellent hFE linearity from 10 nA to 10 mA
Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
High breakdown: 45 V min
APPLICATIONS
Weigh scales
Low noise, op amp, front end
Current mirror and current sink/source
Low noise instrumentation amplifiers
Voltage controlled attenuators
Log amplifiers

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MAT01AH Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	6 Pin
Case/Package	TO-78-6
Frequency	450 MHz
Voltage Rating (DC)	45.0 V
Current Rating	20.0 mA
Polarity	NPN
Power Dissipation	1.8 W
Breakdown Voltage (Collector to Emitter)	45 V
Continuous Collector Current	0.025A
Input Power (Max)	500 mW
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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