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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The MJ11016G is a 120V Silicon NPN Bipolar Darlington Power Transistor designed for use as output devices in complementary general purpose amplifier applications. The transistor has monolithic construction with built-in base-emitter shunt resistor.
High DC current gain
Collector-base voltage (Vcbo = 120V)
Emitter-base voltage (Vcbo = 5V)

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MJ11016G Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Voltage Rating (DC)	120 V
Current Rating	30.0 A
Output Voltage	120 V
Output Current	30 A
Number of Positions	2 Position
Polarity	NPN
Power Dissipation	200 W
Breakdown Voltage (Collector to Emitter)	120 V
Continuous Collector Current	30A
hFE Min	1000 @20A, 5V
Input Power (Max)	200 W
DC Current Gain (hFE)	1000
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	4MHz (Min)
Power Dissipation (Max)	200000 mW
Input Voltage	5 V
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Size-Length	39.37 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Operating Temperature	-55℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

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