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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

**PNP Darlington Transistors, ON Semiconductor**
These Darlington transistors by ON Semiconductor are a compound structure consisting of two bipolar transistors, either integrated or separated devices. These devices are connected so the current amplified by the first transistor is further amplified by the second device.

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MJ11033G Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-204-2
Voltage Rating (DC)	-120 V
Current Rating	50.0 A
Output Voltage	120 V
Output Current	50 A
Number of Positions	2 Position
Polarity	PNP, P-Channel
Power Dissipation	300 W
Breakdown Voltage (Collector to Emitter)	120 V
Continuous Collector Current	50A
hFE Min	1000 @25A, 5V
hFE Max	18000
Input Power (Max)	300 W
DC Current Gain (hFE)	18000
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	300 W
Input Voltage	5 V
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Size-Length	38.86 mm
Size-Width	26.67 mm
Size-Height	8.51 mm
Operating Temperature	-55℃ ~ 200℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tray
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2016/06/20
ECCN Code	EAR99

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