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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

DESCRIPTION
NEC"s NE3210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE 3210S01 is housed in a low cost plastic package which is available in tape and reel.
NEC"s stringent quality assurance and test procedures assure the highest reliability and performance.
FEATURES
• SUPER LOW NOISE FIGURE:
0.35 dB TYP at f = 12 GHz
• HIGH ASSOCIATED GAIN:
13.5 dB TYP at f = 12 GHz
• GATE LENGTH: LG ≤ 0.20 μm
• GATE WIDTH: WG = 160 μm

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NE3210S01 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SMD-1
Frequency	12 GHz
Power Dissipation	165 mW
Breakdown Voltage (Drain to Source)	4.00 V
Continuous Drain Current (Ids)	10.0 mA
Gain	13.5 dB
Test Current	10 mA
Operating Temperature (Max)	125 ℃
Operating Temperature (Min)	-65 ℃
Voltage Rating	4 V
	Show
Size-Height	1.5 mm
Product Lifecycle Status	Obsolete
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
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