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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

Bipolar (BJT) Transistor NPN + Diode (Isolated) 350V 15A 35MHz 230W Through Hole TO-264

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NJL4281DG Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	5 Pin
Case/Package	TO-264-5
Voltage Rating (DC)	260 V
Current Rating	15.0 A
Number of Positions	5 Position
Polarity	NPN
Power Dissipation	230 W
Gain Bandwidth Product	35 MHz
Breakdown Voltage (Collector to Emitter)	350 V
Continuous Collector Current	15A
hFE Min	80 @5A, 5V
Input Power (Max)	230 W
DC Current Gain (hFE)	250
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	65 ℃
Power Dissipation (Max)	230000 mW
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Size-Length	19.89 mm
Size-Width	4.89 mm
Size-Height	25.98 mm
Operating Temperature	-65℃ ~ 150℃ (TJ)
Product Lifecycle Status	Unknown
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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(Additional charges ($35-$50) may apply for delivery in these areas)
- Delivery date: usually 2 to 7 working days.
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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
The terms here are for reference only, the actual terms are subject to the sales quotation.
- Please confirm product specifications when ordering.
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SN:H1.59796LO20198V41Q0QC0S0

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