NTJD4001NT1G ON Semiconductor - MOSFET, MOSFET Transistor

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NTJD4001NT1G - ON Semiconductor
Manufacturer:
ON Semiconductor
ManyChip's Part#:
MC316052
Category:
MOSFET, MOSFET Transistor
Package:
SC-70-6
Datasheet:
Datasheet 3D Model
Description:
МОП-транзистор; сдвоенный N-канальный; напряжение сток-исток 30 В; RDS(вкл) 1 Ом; ток стока 250 мА; SOT-363; рассеиваемая мощность 272 мВт; напряжение затвор-исток ±20 В; -55°...
Stock Locations:
Availability:
3,301 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 0.04

Updated at 16/09/2026 10:30:15(UTC+8)

Certifications

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Description

NTJD4001NT1G — это сдвоенный N-канальный маломощный МОП-транзистор, предназначенный для устройств с питанием от литий-ионных аккумуляторов, таких как мобильные телефоны, КПК и цифровые камеры (DSC). Он подходит для применения в качестве ключа нижнего плеча нагрузки, в понижающих преобразователях и схемах сдвига уровня.
Низкий заряд затвора для быстрого переключения
Затвор с защитой от электростатического разряда (ESD)

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Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SC-70-6
Voltage Rating (DC)	30.0 V
Current Rating	250 mA
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	1 Ω
Polarity	Dual N-Channel
Power Dissipation	272 mW
Threshold Voltage	1.2 V
Input Capacitance	20pF @5V
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	30 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	250 mA
Rise Time	23 ns
Input Capacitance (Ciss)	33pF @5V(Vds)
Rating Power (Max)	272 mW
Fall Time	82 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.72 W
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Size-Length	2.2 mm
Size-Width	1.35 mm
Size-Height	1 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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