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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

• NPN Darlington Transistor This device designed for applications requiring extremely high gain at collector currents to 1.0A and high breakdown voltage. • Sourced from process 06.

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NZT605 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Frequency	150 MHz
Voltage Rating (DC)	11.0 V
Current Rating	1.50 A
Power Rating	1 W
Polarity	NPN
Power Dissipation	1000 mW
Breakdown Voltage (Collector to Emitter)	110 V
Continuous Collector Current	1.5A
hFE Min	2000 @1A, 5V
Input Power (Max)	1 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	150MHz (Min)
Power Dissipation (Max)	1000 mW
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Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.6 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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