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Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The PMCPB5530X is a N/P-channel complementary enhancement-mode FET in a small and leadless ultra thin surface-mount plastic package using Trench MOSFET technology. It is suitable for DC-to-DC converters and small brushless DC motor drive applications.
Very fast switching characteristics
Exposed drain pad for excellent thermal conduction

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PMCPB5530X Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Number of Pins	8 Pin
Case/Package	SOT-1118
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.026 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	1.17 W
Threshold Voltage	650 mV
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	4A
Fall Time	16 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1170 mW
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Product Lifecycle Status	Unknown
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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SN:H0.85349LO78131V76Q0QC0S2

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