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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Minimize the current at your gate with the STGW30NC60W IGBT transistor from STMicroelectronics. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 200000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.

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STGW30NC60W Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	60.0 A
Drain to Source Resistance (on) (Rds)	2.50 Ω
Polarity	N-Channel
Power Dissipation	200 W
Breakdown Voltage (Drain to Source)	600 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	30.0 A
Rise Time	12.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	200 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200000 mW
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Size-Length	15.75 mm
Size-Width	5.15 mm
Size-Height	20.15 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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