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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

You can use this STGY40NC60VD IGBT transistor from STMicroelectronics as an electronic switch. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 600 V. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.

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STGY40NC60VD Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	50.0 A
Polarity	N-Channel
Power Dissipation	260 W
Input Capacitance	4550 pF
Drain to Source Voltage (Vds)	600 V
Continuous Drain Current (Ids)	50.0 A
Rise Time	19.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	50 ℃/W
Reverse recovery time	44 ns
Input Power (Max)	260 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	260000 mW
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Size-Length	15.9 mm
Size-Width	5.3 mm
Size-Height	20.3 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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