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Updated at 18/06/2025 10:30:15(UTC+8)

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Description

The STN851 is a NPN fast-switching Power Transistor manufactured in Planar Technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Very low collector to emitter saturation voltage
High current gain characteristic
Fast-switching speed

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STN851 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-261-4
Frequency	130 MHz
Voltage Rating (DC)	60.0 V
Current Rating	5.00 A
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	1.6 W
Gain Bandwidth Product	130 MHz
Breakdown Voltage (Collector to Emitter)	60 V
Continuous Collector Current	5A
hFE Min	150 @2A, 1V
hFE Max	350
Input Power (Max)	1.6 W
DC Current Gain (hFE)	300
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1600 mW
	Show
Size-Length	6.5 mm
Size-Width	3.5 mm
Size-Height	1.8 mm
Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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