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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The STP80NF06 is a 60V N-channel STripFET™ II Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
100% Avalanche tested
Low threshold drive

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STP80NF06 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Voltage Rating (DC)	60.0 V
Current Rating	80.0 A
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0065 Ω
Polarity	N-Channel
Power Dissipation	300 W
Threshold Voltage	3 V
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	80.0 A
Rise Time	85 ns
Input Capacitance (Ciss)	3850pF @25V(Vds)
Input Power (Max)	300 W
Fall Time	25 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	300W (Tc)
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Size-Length	10.4 mm
Size-Width	4.6 mm
Size-Height	9.15 mm
Operating Temperature	175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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