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STPSC10H065DY - ST Microelectronics
Manufacturer:
ST Microelectronics
ManyChip's Part#:
MC72012357
Category:
Schottky Diode
Package:
TO-220-2
Datasheet:
Datasheet 3D Model
Description:
STMICROELECTRONICS STPSC10H065DY Silicon Carbide Schottky Diode, SIC, 650V Series, Single, 650V, 10A, 28.5NC, TO-220AC
Stock Locations:
Availability:
242 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 5.63

Updated at 01/11/2025 10:30:15(UTC+8)

Certifications

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Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
**Key Features**
AEC-Q101 qualified
No or negligible reverse recovery
Switching behavior independent of temperature
Dedicated to PFC applications
High forward surge capability
PPAP capable
ECOPACK® 2 compliant component

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STPSC10H065DY Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	2 Pin
Case/Package	TO-220-2
Forward Voltage	1.75V @10A
Forward Current	10 A
Max Forward Surge Current (Ifsm)	90 A
Forward Current (Max)	10 A
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-40 ℃
Junction Temperature (Max)	175 ℃
	Show
Operating Temperature	-40℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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