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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Need a MOSFET that will work in radio frequency environments? This VRF152 RF amplifier made from Microsemi is perfect for switching and amplifying electronic signals. Its maximum power dissipation is 300000 mW. This RF power MOSFET has a minimum operating temperature of -65 °C and a maximum of 200 °C. Its maximum frequency is 175 MHz. This N channel RF power MOSFET operates in depletion mode.

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VRF152 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	M-174
Frequency	175 MHz
Current Rating	20 A
Power Dissipation	300 W
Threshold Voltage	3.6 V
Drain to Source Voltage (Vds)	130 V
Breakdown Voltage (Drain to Source)	130 V
Continuous Drain Current (Ids)	20.0 A
Output Power	150 W
Gain	22 dB
Test Current	250 mA
Input Capacitance (Ciss)	383pF @50V(Vds)
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	300000 mW
Voltage Rating	130 V
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Material	Silicon
Operating Temperature	65℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Box
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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