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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

Thanks to Diodes Zetex"s NPN ZXTN04120HFFTA Darlington transistor, you can easily amplify a current and output a much higher current gain value within your circuit. This Darlington transistor array"s maximum emitter base voltage is 10 V, while its maximum base emitter saturation voltage is 1.7@1mA@1A V. This product"s maximum continuous DC collector current is 1 A, while its minimum DC current gain is 3000@50mA@5 V|3000@500mA@5V|3000@1A@5V|1000@2A@5V. It has a maximum collector emitter saturation voltage of 0.9@0.25mA@250mA|1.5@1mA@1A|1.5@5mA@2A V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 120 V and a maximum emitter base voltage of 10 V. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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ZXTN04120HFFTA Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Polarity	NPN
Power Dissipation	2 W
Breakdown Voltage (Collector to Emitter)	120 V
Continuous Collector Current	1A
hFE Min	3000 @1A, 5V
hFE Max	3000
Input Power (Max)	1.5 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Gain Bandwidth	120 MHz
Power Dissipation (Max)	2000 mW
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Size-Width	1.7 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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SN:H1.64945LO34582V45Q0QC0S1

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