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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The 2N2219A from STMicroelectronics is a through hole NPN silicon planar epitaxial transistor in TO-39 package. This transistor designed as high speed switch which features low leakage currents, low saturation voltage and useful current gain over a wide range of collector current. Typically suitable for high speed switching application.
Collector to emitter voltage (Vce) is 40V
Collector current (Ic) is 0.6A
Power dissipation (Pd) is 3W
Collector to emitter saturation voltage of 1V at 500mA collector current
DC current gain (hFE) of 35 at 0.1mA collector current
Operating junction temperature range from 175°C

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2N2219A Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-39
Frequency	250 MHz
Voltage Rating (DC)	75.0 V
Current Rating	600 mA
Power Rating	800 mW
Number of Positions	3 Position
Polarity	NPN
Power Dissipation	800 mW
Breakdown Voltage (Collector to Base)	75.0 V
Breakdown Voltage (Collector to Emitter)	30 V
hFE Min	100 @150mA, 10V
Input Power (Max)	800 mW
DC Current Gain (hFE)	300
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	800 mW
	Show
Material	Silicon
Operating Temperature	-65℃ ~ 175℃
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Bag
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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SN:H2.62232LO4513V50Q0QC0S0

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