Биполярный (BJT) одиночный транзистор, NPN, 30 В, 250 МГц, 0.5 Вт (1/2 Вт), 800 мА, 100 hFE

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-18 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 500 mW |
| Breakdown Voltage (Collector to Emitter) | 30.0 V |
| hFE Min | 100 |
| DC Current Gain (hFE) | 100 |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Show | |
| Product Lifecycle Status | Active |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2014/12/17 |