RF Small Signal Field-Effect Transistor, 1Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-72, TO-206AF, 4Pin

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-72 |
| Power Dissipation | 300 mW |
| Drain to Source Voltage (Vds) | 50 V |
| Reverse Breakdown Voltage | 50 V |
| Input Capacitance (Ciss) | 6pF @15V(Vds) |
| Input Power (Max) | 300 mW |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 mW |
| Show | |
| Operating Temperature | -55℃ ~ 200℃ (TJ) |
| Product Lifecycle Status | Obsolete |
| RoHS | Non-Compliant |
| Lead-Free Status | Contains Lead |
| ECCN Code | EAR99 |