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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IXFN120N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET™) and low RDS (on). The IXYS most popular power MOSFET (HiPerFET™) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.
Encapsulating epoxy meets UL94V-0 flammability
miniBLOC with aluminium nitride isolation
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated
Low inductance
High power density
Easy to mount
Space-saving s

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IXFN120N20 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Screw
Number of Pins	3 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	200 V
Current Rating	120 A
Power Rating	600 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.017 Ω
Polarity	N-Channel
Power Dissipation	600 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	120 A
Rise Time	55 ns
Input Capacitance (Ciss)	9100pF @25V(Vds)
Input Power (Max)	600 W
Fall Time	40 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	600W (Tc)
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Material	Silicon
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
ECCN Code	EAR99

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