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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The 2N6849 is a -100V single P-channel Hi-Rel MOSFET with superior reverse energy and diode recovery dv/dt capability. The HEXFET® technology is the key to International Rectifier"s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art" design achieves very low on-state resistance combined with high transconductance. The IRFF9130 HEXFET transistor also features all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. It is well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
Repetitive avalanche ratings
Dynamic dv/dt rating
Hermetically sealed
Simple drive requirements
Ease of paralleling ESD rating - Class 1C per MIL-STD-750, method 1020
±20V Gate to source voltage
0.20W/°C Linear derating factor
-6.5A Avalanche current (IAR)
5°C/W Thermal resistance, junction to case
175°C/W Thermal resistance, junction to ambient
ESD sensitive device, take proper precaution while handling the device.

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2N6849 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-205
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	300 mΩ
Polarity	P-Channel
Power Dissipation	25 W
Part Family	IRFF9130
Drain to Source Voltage (Vds)	-100 V
Breakdown Voltage (Drain to Source)	-100 V
Continuous Drain Current (Ids)	-6.50 A
Operating Temperature (Max)	150 ℃
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Lead Length	14.2 mm
Weight	2.40 g
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	Non-Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
Mil-Spec	Yes
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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