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Updated at 02/11/2025 10:30:15(UTC+8)

Certifications

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Description

The 2STF2550 is a PNP high performance Power Transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Very low collector-emitter saturation voltage
High current gain characteristic
Fast-switching speed
Surface-mount device in medium power package

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2STF2550 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-89-3
Number of Positions	3 Position
Polarity	PNP
Power Dissipation	1.4 W
Breakdown Voltage (Collector to Emitter)	50 V
hFE Min	110 @2A, 2V
Input Power (Max)	1.4 W
DC Current Gain (hFE)	70
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	1400 mW
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Operating Temperature	150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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