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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The APT30GT60BRDQ2G IGBT transistor from Microsemi is the best electronic switch for fast switching. Its maximum power dissipation is 250000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

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APT30GT60BRDQ2G Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	64.0 A
Power Dissipation	250000 mW
Breakdown Voltage (Collector to Emitter)	600 V
Reverse recovery time	22 ns
Input Power (Max)	250 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	250000 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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