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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The BF 998 E6327 is a silicon N-channel MOSFET Triode for low-noise and gain-controlled input stage up to 1GHz.
Short-channel transistor with high S/C quality factor
Qualified according AEC-Q101

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BF998E6327HTSA1 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-253-4
Frequency	45 MHz
Voltage Rating (DC)	12.0 V
Current Rating	30.0 mA
Number of Positions	4 Position
Polarity	N-Channel
Power Dissipation	200 mW
Drain to Source Voltage (Vds)	12 V
Continuous Drain Current (Ids)	300 mA
Gain	28 dB
Test Current	10 mA
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	200 mW
Voltage Rating	12 V
	Show
Size-Length	2.9 mm
Size-Width	1 mm
Size-Height	1.3 mm
Material	Silicon
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Contains Lead
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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