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Updated at 18/06/2025 10:30:15(UTC+8)

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Description

The BFU530AR RF amplifier from NXP Semiconductors can provide you an alternative to traditional BJTs in that it can work with higher radio frequencies. This RF transistor has a minimum operating temperature of -40 °C and a maximum of 150 °C.

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BFU530AR Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	SOT-23-3
Number of Positions	3 Position
Power Dissipation	450 mW
Input Capacitance	0.83 pF
Output Power	10 dBm
Breakdown Voltage (Collector to Emitter)	12 V
Gain	18 dB
hFE Min	60 @10mA, 8V
Input Power (Max)	450 mW
DC Current Gain (hFE)	60
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	450 mW
Supply Voltage	24 V
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Material	Silicon
Operating Temperature	-40℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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