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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The BSD235C H6327 is a N/P-channel Power MOSFET within the same package are part of Infineon"s famous low voltage OptiMOS™ families, the market leader in high efficiency solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). It is suitable for use with DC to Dc converters and on-board charger applications.
Complementary P + N channel
Enhancement-mode
Avalanche rated

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BSD235CH6327XTSA1 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	6 Pin
Case/Package	SOT-363-6
Power Rating	0.5 W
Number of Positions	6 Position
Drain to Source Resistance (on) (Rds)	0.266 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	500 mW
Threshold Voltage	950 mV
Drain to Source Voltage (Vds)	20 V
Continuous Drain Current (Ids)	0.95A/0.53A
Input Capacitance (Ciss)	47pF @10V(Vds)
Input Power (Max)	500 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	500 mW
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Size-Length	2 mm
Size-Width	1.25 mm
Size-Height	0.8 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/12/17

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- Vacuum packaging
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