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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

MOSFET N-channel enhancement switching transistor Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances. The transistor is protected against excessive input voltages by integrated back-to-back diodes between gate and substrate.

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BSS83 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	SOT-143
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	45 Ω
Polarity	N-Channel
Power Dissipation	230 mW
Threshold Voltage	2 V
Drain to Source Voltage (Vds)	10 V
Continuous Drain Current (Ids)	50.0 mA
Operating Temperature (Max)	125 ℃
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Product Lifecycle Status	Unknown
Packaging	Cut Tape (CT)
RoHS	RoHS Compliant
REACH SVHC Compliance	No SVHC

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