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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

Description
The CPC5602C is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications.
Features
• Low on resistance 10 ohms
• High input impedance
• Low input and output leakage
• Small package size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings
Applications
• Support Component for LITELINK™
Data Access Arrangement (DAA)
• Normally-on switch
• Telecom
• Constant Current Source

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CPC5602CTR Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	4 Pin
Case/Package	TO-261-4
Voltage Rating (DC)	350 V
Current Rating	5.00 mA
Number of Channels	1 Channel
Polarity	N-CH
Power Dissipation	2.5 W
Input Capacitance	300 pF
Drain to Source Voltage (Vds)	350 V
Continuous Drain Current (Ids)	5.00 mA
Input Capacitance (Ciss)	300pF @0V(Vds)
Input Power (Max)	2.5 W
Operating Temperature (Max)	85 ℃
Operating Temperature (Min)	-40 ℃
Power Dissipation (Max)	2.5W (Ta)
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Material	Silicon
Operating Temperature	-40℃ ~ 85℃ (TA)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free

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- Carefully inspected and packed by ManyChip warehouse
- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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