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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The FDB047N10 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and micro solar inverter.
Fast switching speed
Low gate charge
High performance Trench technology for extremely low RDS (ON)
High power and current handling capability

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FDB047N10 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0039 Ω
Power Dissipation	375 W
Threshold Voltage	3.5 V
Drain to Source Voltage (Vds)	100 V
Rise Time	386 ns
Input Capacitance (Ciss)	11500pF @25V(Vds)
Input Power (Max)	375 W
Fall Time	244 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	375 W
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Size-Length	10.67 mm
Size-Width	11.33 mm
Size-Height	4.83 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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- Vacuum packaging
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