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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The FDB33N25TM is a 250V N-channel UniFET™ MOSFET based on planar stripe and DMOS technology. This high voltage MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. The body diode"s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control. Its trr is less than 100ns and the reverse dv/dt immunity is 15V/ns while normal planar MOSFETs have over 200ns and 4.5V/ns respectively. Therefore, it can remove additional component and improve system reliability in certain applications in which the performance of MOSFET"s body diode is significant. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. This product is general usage and suitable for many different applications.
Low gate charge
100% Avalanche tested

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FDB33N25TM Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	3 Pin
Case/Package	TO-263-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.077 Ω
Power Dissipation	235 W
Threshold Voltage	3 V
Input Capacitance	1640 pF
Drain to Source Voltage (Vds)	250 V
Rise Time	230 ns
Input Capacitance (Ciss)	1640pF @25V(Vds)
Input Power (Max)	235 W
Fall Time	120 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	235 W
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Size-Length	10.67 mm
Size-Width	11.33 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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- Vacuum packaging
- Anti-static packaging
- Shockproof foam
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