Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229VCCC, 2 X 2MM, 0.8MM HEIGHT, ROHS COMPLIANT, MICROFET-6

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | MicroFET-6 |
| Polarity | P-CH |
| Power Dissipation | 1.4 W |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 3A |
| Rise Time | 11 ns |
| Breakdown Voltage (Collector to Emitter) | 2.00 V |
| Input Capacitance (Ciss) | 435pF @10V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.4 W |
| Show | |
| Size-Length | 2 mm |
| Size-Width | 2 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| ECCN Code | EAR99 |