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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
■ Q1: N-Channel
7.0A, 30V RDS(on) = 0.030Ω @ VGS = 10V
RDS(on) = 0.044Ω @ VGS = 4.5V
■ Q2: P-Channel
-5A, -30V RDS(on) = 0.052Ω @ VGS = -10V
RDS(on) = 0.080Ω @ VGS = -4.5V
■ Fast switching speed
■ High power and handling capability in a widely used surface mount package

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FDS8962C Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Current Rating	7.00 A
Polarity	N-Channel, P-Channel
Power Dissipation	2 W
Input Capacitance	528 pF
Gate Charge	9.60 nC
Drain to Source Voltage (Vds)	30 V
Breakdown Voltage (Drain to Source)	±30.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	5.00 A
Rise Time	13.0 ns
Input Capacitance (Ciss)	575pF @15V(Vds)
Input Power (Max)	900 mW
Power Dissipation (Max)	900 mW
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Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Obsolete
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
ECCN Code	EAR99

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