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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The FDS9934C is a dual N/P-channel enhancement-mode Power FET produced using advanced PowerTrench process. It is especially tailored to minimize ON-state resistance and yet maintain superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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FDS9934C Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Current Rating	6.50 A
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.025 Ω
Polarity	N-Channel, P-Channel
Power Dissipation	2 W
Threshold Voltage	1 V
Input Capacitance	955 pF
Gate Charge	8.70 nC
Drain to Source Voltage (Vds)	20 V
Breakdown Voltage (Drain to Source)	±20.0 V
Breakdown Voltage (Gate to Source)	±10.0 V
Continuous Drain Current (Ids)	6.50 A
Rise Time	9.00 ns
Input Capacitance (Ciss)	650pF @10V(Vds)
Input Power (Max)	900 mW
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1.6 W
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Size-Length	4.9 mm
Size-Width	3.9 mm
Size-Height	1.575 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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