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FQB34N20LTM - Fairchild
Manufacturer:
Fairchild
ManyChip's Part#:
MC13163290
Category:
MOSFET, MOSFET Transistor
Package:
TO-263-3
Datasheet:
Datasheet 3D Model
Description:
FAIRCHILD SEMICONDUCTOR FQB34N20LTM MOSFET Transistor, N Channel, 31A, 200V, 75mohm, 10V, 2V
Stock Locations:
Availability:
274 pcs In Stock
MOQ:
1 pcs
Unit Price:
$ 1.47

Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The FQB34N20LTM is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
Low level gate drive requirement allowing direct operation from logic drivers
100% Avalanche tested
55nC Typical low gate charge
52pF Typical low Crss

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FQB34N20LTM Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	2 Pin
Case/Package	TO-263-3
Voltage Rating (DC)	200 V
Current Rating	31.0 A
Number of Positions	2 Position
Drain to Source Resistance (on) (Rds)	75 mΩ
Polarity	N-Channel
Power Dissipation	180 W
Threshold Voltage	2 V
Input Capacitance	3.90 nF
Gate Charge	72.0 nC
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	31.0 A
Rise Time	520 ns
Input Capacitance (Ciss)	3900pF @25V(Vds)
Input Power (Max)	3.13 W
Fall Time	370 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.13 W
	Show
Size-Length	10.67 mm
Size-Width	9.65 mm
Size-Height	4.83 mm
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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