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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchildís proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
-9.4A, -60V, RDS(on)= 0.185Ω@VGS= -10 V
Low gate charge ( typical 13 nC)
Low Crss ( typical 45 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability

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FQD11P06 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Case/Package	DPAK
Polarity	P-CH
Drain to Source Voltage (Vds)	60 V
Continuous Drain Current (Ids)	9.4A
	Show
Product Lifecycle Status	Unknown
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC

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SN:H0.33333LO25089V28Q0QC0S0

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