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Updated at 17/06/2025 10:30:15(UTC+8)

Certifications

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Description

The FQP34N20 is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor"s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
100% Avalanche tested
60nC Typical low gate charge
55pF Typical low Crss

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FQP34N20 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.06 Ω
Power Dissipation	180 W
Threshold Voltage	5 V
Input Capacitance	3100 pF
Drain to Source Voltage (Vds)	200 V
Rise Time	570 ns
Input Capacitance (Ciss)	2400pF @25V(Vds)
Input Power (Max)	180 W
Fall Time	240 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	18 W
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Size-Length	10.1 mm
Size-Width	4.7 mm
Size-Height	9.4 mm
Product Lifecycle Status	Active
Packaging	Tube
RoHS	Compliant with Exemption
Lead-Free Status	Lead Free

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