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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The HGTG30N60A4 is a SMPS IGBT combines the best features of high input impedance of a MOSFET and low on state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications.
Low saturation voltage
Low conduction losses due to low on-state resistance
58ns fall time at 125°C junction temperature

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HGTG30N60A4 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-247-3
Voltage Rating (DC)	600 V
Current Rating	75.0 A
Power Rating	463 W
Number of Positions	3 Position
Polarity	N-Channel
Power Dissipation	463 W
Rise Time	12.0 ns
Breakdown Voltage (Collector to Emitter)	600 V
Input Power (Max)	463 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	463000 mW
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Size-Length	15.87 mm
Size-Width	4.82 mm
Size-Height	20.82 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15
ECCN Code	EAR99

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