FAIRCHILD SEMICONDUCTOR HGTP20N60A4 – однопроводный транзистор типа IGBT с характеристиками: сила затвора 70 А, напряжение на входе 2,7 В, мощность 290 Вт, напряжение на выходе 600 В. Форма клемм – TO-220AB; количество контактов – 3.

| Attribute | Attribute Value |
|---|---|
| Datasheet | Datasheet |
| 3D Model | 3D Model |
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Voltage Rating (DC) | 600 V |
| Current Rating | 70.0 A |
| Power Rating | 290 W |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 290 W |
| Rise Time | 12.0 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Rating Power (Max) | 290 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 290000 mW |
| Show | |
| Size-Width | 4.83 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| RoHS | RoHS Compliant |
| Lead-Free Status | Lead Free |
| REACH SVHC Compliance | No SVHC |
| REACH SVHC Compliance Edition | 2015/06/15 |
| ECCN Code | EAR99 |