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Updated at 02/11/2025 10:30:15(UTC+8)

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Description

The IRF530NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage Vds is 100V
Gate to source voltage is ±20V
On resistance Rds(on) of 90mohm at Vgs of 10V
Power dissipation Pd of 70W at 25°C
Continuous drain current Id of 17A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C

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IRF530NPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	79 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.09 Ω
Polarity	N-CH
Power Dissipation	63 W
Threshold Voltage	4 V
Input Capacitance	920 pF
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Continuous Drain Current (Ids)	17A
Rise Time	22 ns
Input Capacitance (Ciss)	920pF @25V(Vds)
Input Power (Max)	70 W
Fall Time	25 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	70W (Tc)
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Size-Length	10.54 mm
Size-Width	4.69 mm
Size-Height	8.77 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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