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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IRF6216TRPBF is a HEXFET® single P-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses and fully characterized avalanche voltage and current. It is suitable for reset switch for active clamp reset DC-to-DC converters.
Dynamic dV/dt rating
Fast switching
Fully avalanche rating
Fully characterized capacitance including effective COSS to simplify design

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IRF6216TRPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Surface Mount
Number of Pins	8 Pin
Case/Package	SOIC-8
Power Rating	2.5 W
Number of Channels	1 Channel
Number of Positions	8 Position
Drain to Source Resistance (on) (Rds)	0.24 Ω
Polarity	P-CH
Power Dissipation	2.5 W
Input Capacitance	1280 pF
Drain to Source Voltage (Vds)	150 V
Breakdown Voltage (Drain to Source)	150 V
Continuous Drain Current (Ids)	2.2A
Rise Time	15 ns
Input Capacitance (Ciss)	1280pF @25V(Vds)
Input Power (Max)	2.5 W
Fall Time	26 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.5W (Ta)
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Size-Length	5 mm
Size-Width	4 mm
Size-Height	1.5 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tape & Reel (TR)
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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