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Updated at 31/10/2025 10:30:15(UTC+8)

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Description

The IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage Vds is 200V
Gate to source voltage is ±20V
On resistance Rds(on) of 150mohm
Power dissipation Pd of 150W at 25°C
Continuous drain current Id of 18A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C

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IRF640NPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	150 W
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.15 Ω
Polarity	N-CH
Power Dissipation	150 W
Threshold Voltage	4 V
Input Capacitance	1160 pF
Drain to Source Voltage (Vds)	200 V
Breakdown Voltage (Drain to Source)	200 V
Continuous Drain Current (Ids)	18A
Rise Time	19 ns
Thermal Resistance	1℃/W (RθJC)
Input Capacitance (Ciss)	1160pF @25V(Vds)
Input Power (Max)	150 W
Fall Time	5.5 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	150W (Tc)
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Size-Length	10.67 mm
Size-Width	4.4 mm
Size-Height	8.77 mm
Material	Silicon
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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