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Updated at 17/06/2025 10:30:15(UTC+8)

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Description

The IRFB38N20DPBF is a HEXFET® single N-channel Power MOSFET offers fully characterized capacitance including effective COSS to simplify design. It is suitable for high frequency DC-to-DC converters and plasma display panel.
Fully characterized avalanche voltage and current
Low gate-to-drain charge to reduce switching losses

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IRFB38N20DPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	320 W
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.054 Ω
Polarity	N-CH
Power Dissipation	320 W
Threshold Voltage	5 V
Input Capacitance	2900 pF
Drain to Source Voltage (Vds)	200 V
Continuous Drain Current (Ids)	38A
Rise Time	95 ns
Input Capacitance (Ciss)	2900pF @25V(Vds)
Input Power (Max)	3.8 W
Fall Time	47 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	3.8W (Ta), 300W (Tc)
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	16.51 mm
Operating Temperature	-55℃ ~ 175℃ (TJ)
Product Lifecycle Status	Active
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17

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