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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The IRG4BC40SPBF is an Insulated Gate Bipolar Transistor optimized for minimum saturation voltage and low operating frequencies (<1kHz). The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
Optimized for specific application conditions
Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs

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IRG4BC40SPBF Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-220-3
Power Rating	160 W
Number of Positions	3 Position
Power Dissipation	160 W
Input Capacitance	2200 pF
Breakdown Voltage (Collector to Emitter)	600 V
Thermal Resistance	80 ℃/W
Input Power (Max)	160 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	160 W
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Size-Length	10.67 mm
Size-Width	4.83 mm
Size-Height	16.51 mm
Operating Temperature	-55℃ ~ 150℃ (TJ)
Product Lifecycle Status	Not Recommended for New Designs
Packaging	Tube
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance Edition	2015/12/17
ECCN Code	EAR99

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