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Updated at 01/11/2025 10:30:15(UTC+8)

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Description

The IXFN130N30 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static drain-to-source ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
International standard packages
MiniBLOC with aluminium nitride isolation
Rugged polysilicon gate cell structure
Unclamped inductive switching (UIS) rating
Low package inductance
Easy to mount
Space saving

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IXFN130N30 Specifications

Attribute	Attribute Value

Datasheet	Datasheet
3D Model	3D Model
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	SOT-227-4
Voltage Rating (DC)	300 V
Current Rating	130 A
Power Rating	700 W
Number of Positions	4 Position
Drain to Source Resistance (on) (Rds)	0.022 Ω
Polarity	N-Channel
Power Dissipation	700 W
Threshold Voltage	4 V
Drain to Source Voltage (Vds)	300 V
Continuous Drain Current (Ids)	130 A
Rise Time	75 ns
Input Capacitance (Ciss)	14500pF @25V(Vds)
Fall Time	31 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Junction Temperature (Max)	150 ℃
Power Dissipation (Max)	700W (Tc)
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Material	Silicon
Weight	0.000036 kg
Operating Temperature	-55℃ ~ 150℃
Product Lifecycle Status	Active
Packaging	Bulk
RoHS	RoHS Compliant
Lead-Free Status	Lead Free
REACH SVHC Compliance	No SVHC
REACH SVHC Compliance Edition	2015/06/15

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